Tuesday, September 17
2A.1 ESD Behavior of RF Switches and Importance of System Efficient ESD Design (EMC+SIPI Exchange Paper)
Seyed Mostafa Mousavi
Seyed Mostafa Mousavi (Senior Member, IEEE) received the B.Sc. degree from the Iran University of Sci. and Tech., Tehran, Iran, in 2007, and the M.Sc. and Ph.D. degrees from the K.N. Toosi University of Tech., Tehran, Iran, in 2010 and 2016, respectively, all in electrical engineering. In 2022, he joined Graz University of Technology, Graz, Austria before moving to the EMC Lab, Missouri University S&T, Rolla, MO, USA, where he is currently a Postdoctoral Fellow, specializing in EMC, ESD, and signal integrity.
2A.1 ESD Behavior of RF Switches and Importance of System Efficient ESD Design (EMC+SIPI Exchange Paper)
2A.2 On-Chip ESD Protection for Multi-Gbps Automotive Serial IO in a 16-nm FinFET Process
Shudong Huang
2A.2 On-Chip ESD Protection for Multi-Gbps Automotive Serial IO in a 16-nm FinFET Process
2A.3 Influence of TVS Properties and Printed Circuit Board Design on System Level ESD Robustness for USB-C High-Speed Data Lines
Steffen Holland
Steffen Holland received his diploma and PhD in Physics from the University of Hamburg in 2004. He joined Philips Semiconductors/NXP/Nexperia in the process development group for discrete bipolar devices in Hamburg, Germany in 2005. The main focus of his work quickly became TCAD process and device simulations for discrete ESD protection devices. He works now on discrete ESD protection devices. His current interests are system level ESD simulations. He currently serves in the Board of Directors at the ESD Association and is chair of the ESDA working group 26.
2A.3 Influence of TVS Properties and Printed Circuit Board Design on System Level ESD Robustness for USB-C High-Speed Data Lines
Authors Corner for 2A.1, 2A.2, and 2A.3
Steffen Holland
Steffen Holland received his diploma and PhD in Physics from the University of Hamburg in 2004. He joined Philips Semiconductors/NXP/Nexperia in the process development group for discrete bipolar devices in Hamburg, Germany in 2005. The main focus of his work quickly became TCAD process and device simulations for discrete ESD protection devices. He works now on discrete ESD protection devices. His current interests are system level ESD simulations. He currently serves in the Board of Directors at the ESD Association and is chair of the ESDA working group 26.
Shudong Huang
Seyed Mostafa Mousavi
Seyed Mostafa Mousavi (Senior Member, IEEE) received the B.Sc. degree from the Iran University of Sci. and Tech., Tehran, Iran, in 2007, and the M.Sc. and Ph.D. degrees from the K.N. Toosi University of Tech., Tehran, Iran, in 2010 and 2016, respectively, all in electrical engineering. In 2022, he joined Graz University of Technology, Graz, Austria before moving to the EMC Lab, Missouri University S&T, Rolla, MO, USA, where he is currently a Postdoctoral Fellow, specializing in EMC, ESD, and signal integrity.