Monday, September 16
KEYNOTE: Memory Technology Advancements Driving High Performance, Reliable Systems
Chandra Mouli
Chandra Mouli is with Micron Technology Inc., Boise, ID, USA. He is currently Vice President of Device Technology R&D with responsibilities in the areas of device characterization, reliability analysis, compact models, test structure design, process & device modeling for all technologies under development in R&D. He received his undergraduate degree in Physics and MSEE from the Indian Institute of Science (IISc), Bangalore, India and Ph.D. (EE) from the University of Texas at Austin in 1994. He has previously worked at Texas Instruments Inc. He was a visiting scholar (VSRP program) at the Tata Institute of Fundamental Research (TIFR) and has been an intern at the Defense Electronics Application Lab (DEAL) in Dehra Dun. His interests include semiconductor devices and process technology for advanced memory, optoelectronic devices, and exploratory research in the area of new materials and device structures. He has ~500 issued patents and several pending in various areas of semiconductor devices and processes – in advanced memory, novel exploratory devices, image sensors, high-speed interconnects, and related technologies. He has served on the technical committees for various conferences, including IEDM, IRPS, and SISPAD. He has also served on the review committees for NSF and SRC and as an editor for IEEE Electron Device Letters (EDL).